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      產品與服務
      SiC

      碳化硅肖特基二極管(SiC Schottky Barrier Diode,SiC SBD)

       

      型 號 IF(AV) VRRM VRSM VDC QC IFSM IFRM Ptot TJ VF IR C 封裝形式
      @TJ
      =25℃
      @TJ=25℃ @TJ=25℃ @TJ=25℃,f=1MHz
      Pulse:tp
      =10µs
      @IF(AV) @VRRM @VR
      =0V
      @VR
      =400V
      @VR
      =800V
      @VR
      =1000V
      A V V V nC A A W V μA PF PF PF PF
      tPower-
      SS01•
      JB0BA6E
      20 650 650 650 82.5 -55~+175 2.3 26.3 1900.0 120.0 88.6 TO-247-2L
      tPower-
      SS01•
      JB0XX6E
      20 650 650 650 -55~+175 1.7 26.3
      tPower-
      SS01•
      JC0BA12
      30 1200 1200 1200 180.0 -55~+175 1.37 25 TO-247-2L
      tPower-
      SS01•
      JB5BA17
      25 1700 1700 1700 203 -55~+175 1.39 76.1 3190.0 151.0 139.0 TO-247-2L
      tPower-
      SS01•
      JB5XX17
      25 1700 1700 1700 -55~+175 1.43 76.1
      一级片aa

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